S-band 600 W Power Amplifier MMIC in 0.5 µm GaN High Voltage Technology

An integrated S-band high power amplifier is demonstrated in a 100 V full-MMIC GaN-on-SiC technology. The high breakdown voltage of this technology results in a high output power density with very good efficiency. This potential is utilized though the design of a power amplifier with low loss matching networks and carefully implemented stability margins. The discussed amplifier delivers a maximum output power of 600 W at a PAE of more than 60 % under pulsed conditions.