W/Si Multilayer Mirrors for Soft X-Ray Wavelengths < 2.4 nm

W/Si multilayer mirrors are a promising candidate for soft X-ray applications at wavelengths below 2.4 nm. However, their optical performance is strongly affected by interface roughness and interlayer mixing, which limits reflectivity. One approach to improving interface quality is the application of BIAS voltage during deposition. In this study, W/Si multilayer mirrors with bilayer thickness of ~1.5 nm and 100 bilayers were fabricated using DC magnetron sputtering, with ion assistance of 75 V, 100 V, and 200 V applied during the deposition of silicon layers. Grazing incidence X-ray reflectivity (GIXR) measurements at Cu Kα (λ = 0.154 nm) showed that applying BIAS ≤ 100 V reduced interface roughness and increased reflectivity, with a maximum effect observed at 75 V. In contrast, at 200 V, strong diffusion intermixing reduced the bilayer thickness to 1.29 nm and nearly eliminated reflectivity. Soft X-ray reflectivity measurements at λ ~ 1.5 nm confirmed that ion assistance improved optical performance, increasing mirror reflectivity from ~1% (BIAS = 0 V) to ~2.3% (BIAS = 75 V). Atomic force microscopy (AFM) measurements also demonstrated a reduction in surface roughness from 0.22 nm to 0.11 nm due to using ion assistance. These results indicate that moderate ion assistance (<100 V) can enhance the optical quality of W/Si multilayer mirrors by reducing interface roughness, while excessive BIAS (>100 V) leads to diffusion intermixing and optical degradation. The novelty of this work lies in the direct application and variation in BIAS voltage during Si-layer growth, enabling detailed investigation of its influence on interface roughness and reflectivity. This approach provides a simple and effective tool for optimizing the performance of W/Si multilayer mirrors for soft X-ray applications.