Effects of the compliance current on the switching of HfO2 and Al:HfO2 memristive devices: characterization and modeling

Memristive devices based on HfO2 and Al:HfO2 dielectrics have been fabricated and characterized to investigate their resistive switching (RS) behavior. The study focuses on employing different values of gate voltage (VG) to tune the compliance current (Icc) across multiple one-transistor-one-resistor (1T1R) devices. Advanced parameter extraction techniques were applied to determine key RS parameters, specifically the set voltage (Vset) and reset voltage (Vreset). Additionally, the cumulative distribution function (CDF) for both Vset and Vreset was calculated for all devices to analyze and compare the cycle-to-cycle (C2C) variability of the two technologies. Finally, the Stanford model was utilized to reproduce the experimental measurements, offering insights into the differences in the shapes of the I-V curves for the HfO2 and Al:HfO2-based devices.