Vth-Based RTN Model Implementation Using OMI Extended to Transient Model Parameter Updates

We present a threshold-voltage based random telegraph noise (RTN) model implementation using the Open Model Interface (OMI), extended to support transient model parameter updates. This approach extends a BSIM4 MOSFET compact model to simulate RTN. The underlying equations and rationale are first introduced, followed by a motivation for using OMI and an explanation of the approach. Frequency and time-domain measurements used for defect characterization of a planar n-type MOSFET are presented, along with examples of parameter extraction using Hidden Markov Models (HMM) and a search-based extraction utilizing histograms. The model's accuracy is then verified through single-device simulations, which compare simulated and measured data in time and frequency domain. Finally, the model's runtime performance is evaluated through single-device and ring oscillator (ROSC) circuit simulations.