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  4. A D-band 23.5dB High Gain 0.8V Low-Power Transformer Matched LNA in 22nm FDSOI CMOS
 
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March 17, 2025
Conference Paper
Title

A D-band 23.5dB High Gain 0.8V Low-Power Transformer Matched LNA in 22nm FDSOI CMOS

Abstract
This work presents a D-band fully differential four-stage common-source low noise amplifier (LNA). The design operates in 110 GHz-140 GHz frequency region, with a 22.4 GHz 3-dB bandwidth, achieving a peak gain of 23.5 dB at 115 GHz with a DC power consumption of 52 mW. It has a noise figure of 7.5dB at 140 GHz and 8.2 dB at 120 GHz. To allow broadband simultaneous matching and biasing, transformer-based interstage matching has been utilized. The design also utilizes back-gate biasing to further increase the linearity and gain of the amplifier.
Author(s)
Wagner, Peter
Gupta, Aditya
Tas, Deniz Gezmis
Fraunhofer-Einrichtung für Mikrosysteme und Festkörper-Technologien EMFT  
Dietz, Marco
Fraunhofer-Einrichtung für Mikrosysteme und Festkörper-Technologien EMFT  
Hagelauer, Amelie  
Fraunhofer-Einrichtung für Mikrosysteme und Festkörper-Technologien EMFT  
Mainwork
16th German Microwave Conference, GeMiC 2025. Proceedings  
Conference
German Microwave Conference 2025  
DOI
10.23919/GeMiC64734.2025.10978997
Language
English
Fraunhofer-Institut für Elektronische Mikrosysteme und Festkörper-Technologien EMFT  
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