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  4. A Full V-Band High-Output Power Frequency Doubler with High Fourth Harmonic Suppression in a InGaAs mHEMT Technology
 
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2025
Conference Paper
Title

A Full V-Band High-Output Power Frequency Doubler with High Fourth Harmonic Suppression in a InGaAs mHEMT Technology

Abstract
This paper presents a full V-Band frequency doubler with high output power and high harmonic suppression, including the fourth harmonic, without any dedicated active or passive filter structure following the doubler stage. The circuit is based on a balanced architecture, and designed in a 35 nm mHEMT technology. The differential signal is generated at the input using an on-chip broadside transformer balun. The MMIC achieves a maximum output power of 5.7 dBm at a frequency of 62 GHz, with a suppression of unwanted harmonics of 27.5 dBc. Over the whole V-Band, a minimum suppression of unwanted harmonics of 21 dBc is achieved.
Author(s)
Sigle, Eric
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Quay, Rüdiger  orcid-logo
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Leuther, Arnulf  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Mainwork
IEEE/MTT-S International Microwave Symposium, IMS 2025  
Conference
International Microwave Symposium 2025  
DOI
10.1109/IMS40360.2025.11103779
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • Balanced

  • frequency doubler

  • high output power

  • metamorphic high-electron-mobility transistor

  • imbalance

  • monolithic microwave integrated circuit

  • millimeter wave

  • multiplier

  • push-push

  • spectral purity

  • transformer-based

  • transformer balun

  • V-Band

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