MOCVD AlYN/GaN HEMTs with 66.5 mV/decade sub-threshold swing and 109 on/off ratio

We report the realization and operation of AlYN/GaN high-electron-mobility transistors (HEMTs). Metal-organic chemical vapor deposition is used to deposit AlYN/GaN semiconductor heterostructures on 100 mm SiC substrates. Polarization-induced 2D electron gas channels formed in the heterostructure exhibit room-temperature mobility >1300 cm2 /V s, sheet density >1:4 x 1013=cm2, and sheet resistance <350 Ω / with good uniformity. Micron-long gate length HEMTs fabricated using regrown nþ GaN contacts demonstrate good DC perfor mance with saturation drain current >0.4 A/mm, transconductance >0.3 S/mm, low threshold voltage VT ¼ 2:0 V, and a high on/off ratio surpassing 109. The drain current shows a nearly negligible hysteresis with the sweep of the gate voltage. Notably, the devices exhibit a near Boltzmann limit sub-threshold swing of 66.5 mV/dec. These observations highlight the promise of AlYN/GaN HEMTs for high-performance electronic applications.