Indium Bump Flip-Chip Process on Gold-Plated and Laser-Structured Alumina Substrate

A flip-chip bonding process of indium bump interconnects (IBI) is presented in this paper. Test structures manufactured using an InGaAs process are assembled onto laser-structured alumina carrier boards plated with a 2 µm thick gold layer. DC measurements and shear force tests are performed to evaluate the electrical and mechanical quality of the interconnects.