• English
  • Deutsch
  • Log In
    Password Login
    Research Outputs
    Fundings & Projects
    Researchers
    Institutes
    Statistics
Repository logo
Fraunhofer-Gesellschaft
  1. Home
  2. Fraunhofer-Gesellschaft
  3. Konferenzschrift
  4. A 300 GHz High-Pass Distributed Amplifier using a Quasi High-Pass Transmission Line Topology
 
  • Details
  • Full
Options
2025
Conference Paper
Title

A 300 GHz High-Pass Distributed Amplifier using a Quasi High-Pass Transmission Line Topology

Abstract
This paper presents a H-band high-pass distributed amplifier consisting of two cascaded amplifiers, which is used as pre-amplifier to drive subsequent high-power amplifier. The first stage is a high-pass distributed amplifier with four parallel gain cells as driver amplifier. The second stage consists of two parallel high-pass distributed amplifiers, connected using a Wilkinson power dividers. Both stages use RF-grounded shunt stubs at gate- and drain-line in order to design high-pass artificial transmission lines. A 3-dB-bandwidth of more than 80 GHz is achieved with a maximum gain of up to 15 dB and a saturated output power of 3 dBm. The maximum measured power added efficiency exceeds 4.5 %. The amplifier is fabricated in a 35 nm InGaAs mHEMT technology
Author(s)
Gebert, Lukas
University of Stuttgart
Schoch, Benjamin
University of Stuttgart
Wrana, Dominik
University of Stuttgart
Ufschlag, Thomas
University of Stuttgart
Haußmann, Simon
University of Stuttgart
Tessmann, Axel  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Kallfass, Ingmar
University of Stuttgart
Mainwork
16th German Microwave Conference, GeMiC 2025. Proceedings  
Conference
German Microwave Conference 2025  
DOI
10.23919/GeMiC64734.2025.10979090
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • high-pass distributed amplifier

  • amplifier

  • H-band

  • cascade

  • InGaAs

  • mHEMT

  • THz

  • Cascode

  • Cookie settings
  • Imprint
  • Privacy policy
  • Api
  • Contact
© 2024