Analysis of a 4H-SiC Lateral PMOSFET Temperature Sensor Between 14 K-482 K

A temperature sensor based on a diode-connected 4H-Silicon Carbide p-type metal oxide semiconductor field effect transistor is characterized in the temperature range between 14K and 482K and its performance has been analysed. The study shows that the sensor characteristics are mainly affected by the threshold voltage, but an unusual reduction of the device current is shown for temperatures lower than 76K, which limits the linearity of the sensor response. Indeed, two operating temperature ranges could be defined. The first one is in the range 76k ≤ T ≤ 175k, showing a linearity of 0.991 in terms of coefficient of determination and a sensitivity of 6.24mv/k at a device current of 3.34nA, instead the second range is for temperatures higher than 175K with a linearity of 0.986 and a sensitivity of 66.37mv/k for a current of 263nA. Moreover, the device is fully compatible with 4H-SiC CMOS technology making possible its use in integrated circuits.