Influence of ALD pulse times and deposition temperature on electrical properties and reliability of MIM decoupling capacitors based on Al-doped ZrO2 high-κ dielectric in BEoL conditions

This paper explores the impact of important ALD parameters, especially of precursor/reactant pulse times as well as of deposition temperature and the combination of them on the electrical performance and reliability of MIM decoupling capacitors with thin high-κ dielectric films based on amorphous Al-doped ZrO2 processed under BEoL-friendly conditions. Specifically, it examines key parameters like capacitance density (C0=9.3 nF/mm², κ=23.9) and field linearity (α=565 ppm/(MV/cm)²). It also assesses lifetime characteristics (tBD|150°C=3.6∙1010 s), while shedding light on the dominant conduction mechanism.