A 4H-SiC CMOS Technology enabling Smart Sensor Integration and Circuit Operation above 500 °C

In order to provide an option for fabrication of high temperature sensing and circuit solutions, an accessible 4H-SiC high temperature CMOS technology was developed. A detailed overview of the fabrication process is given, with options for lateral power transistor integration, threshold voltage manipulation, optimization of interface state density, dedicated p-type ohmic contacts and two high temperature metallization layers. To prove high temperature device operation capability, device characteristics above 500 °C are presented. Examples include an inverter as a basic logic building block and a lateral power transistor with a blocking voltage of over 700 V. Finally, lateral integrated UV photodiodes based on a p-n junction are presented as a sensor application example. In collaboration with different partners, more complex integrated circuits and smart sensing solutions have also been realized and demonstrated previously, highlighting the possibilities if this technology.