Characterization and Large-Signal Modeling of 4-Pole Backgated InGaAs HEMT

This paper presents, for the first time, the electrical measurements, characterization, and large-signal modeling of a backgated 4-pole, 20 nm InGaAs HEMT device. The primary objective of this work is to characterize and model the influence of varying backgate voltages on device performance. A robust empirical large-signal model that accurately captures the impact of these voltage variations on the device characteristics is developed. This model is constructed by identifying the parameters directly affected by the backgate voltage and formulating analytical equations to describe this dependency. By manipulating the backgate voltage to attain a positive threshold voltage, these models can be used to design mixed-signal circuits with digital logic capabilities.