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Toward Energy-Efficient Ferroelectric Field-Effect Transistors and Ferroelectric Random Access Memories: Tailoring the Coercive Field of Ferroelectric HfO₂ Films
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2024
Journal Article
Title
Toward Energy-Efficient Ferroelectric Field-Effect Transistors and Ferroelectric Random Access Memories: Tailoring the Coercive Field of Ferroelectric HfO₂ Films
Author(s)
Lehninger, David
Fraunhofer-Institut für Photonische Mikrosysteme IPMS
Sünbül, Ayse
Fraunhofer-Institut für Photonische Mikrosysteme IPMS
Seidel, Konrad
Fraunhofer-Institut für Photonische Mikrosysteme IPMS
Lederer, Maximilian
Fraunhofer-Institut für Photonische Mikrosysteme IPMS
Journal
Physica status solidi. A
Project(s)
Embedded storage elements on next MCU generation ready for AI on the edge
Funding(s)
H2020-EU.2.1.1.
Funder
European Commission
Open Access
DOI
10.1002/pssa.202300712
Language
English
Fraunhofer-Institut für Photonische Mikrosysteme IPMS
Keyword(s)
coercive fields
energy efficiency
ferroelectrics
hafnium oxide
memories