Partial discharge behaviour analysis of silicon nitride ceramics

Silicon nitride ceramic, one of the most promising power electronics carrier board materials, is examined non-destructively by means of partial discharge measurement. A variety of sample-electrode combinations is evaluated regarding inferences about characterization of the ceramics as well as the field application of power electronics carrier boards. It is shown that electrode type, substrate thickness and supplier-specific ceramic materials in combination with the manufacturing process influence the partial discharge occurrence characteristics. In contrast to the literature, partial discharges within the ceramic are not excluded, while a metallization-free characterization option is demonstrated by aggregating measurements with different electrode geometries. Finally, an overview of the partial discharge characteristics of active metal brazing-metallized silicon nitride ceramics is presented.