Investigation of TSEPs for junction temperature estimation of GaN and SiC devices in power cycling tests

The sensitivities of six temperature sensitive electrical parameters (TSEPs), including RDS(on), VGS(th), IGSS, VGS, IDSS, and VSD, of three gallium nitride (GaN) high-electron-mobility transistors (HEMTs) with Schottky gate, one GaN gate injection transistor (GIT) with ohmic gate, and two silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) are investigated. The suitability of these TSEPs for the junction temperature estimation in power cycling (PC) tests is evaluated. The findings can serve as a guide for choosing the most suitable TSEPs for a universal PC test bench for both GaN and SiC devices.