A Structured Approach for Embedded Memory Integration of Emerging Memory Technologies

In this paper we present a structured approach to make emerging memory technologies usable in integrated, electrical systems as embedded memory. In order to reach a necessary abstraction level to enable the usage of novel memory cells, in our case shown at the example of resistive random access memory (RRAM), several steps must be realized to be able to take advantage of the benefits of a new memory technology. Those steps constitute a transition from stand-alone memory device to usable, configurable memory arrays with read and programming ability, included in a digital standard cell grid to enable the application as embedded memory in integrated systems. We demonstrate our approach on the example of 1- Transistor-I-Resistor (1TIR) RRAM, but the general methodology can be used for other evolving memory technologies, as well.