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  4. Monolithically Integrated GaN Power Stage for More Sustainable 48 V DC-DC Converters
 
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2024
Journal Article
Title

Monolithically Integrated GaN Power Stage for More Sustainable 48 V DC-DC Converters

Abstract
In this article, a fully monolithically integrated GaN power stage with a half-bridge, driver, level shifter, dead time and voltage mode control for 48 V DC-DC converters is proposed and analyzed. The design of the GaN IC is presented in detail, and measurements of the single function blocks and the DC-DC converter up to 48 V are shown. Finally, considerations are given on a life cycle assessment with regard to the GaN power integration. This GaN power IC or stage demonstrates a higher level of integration, resulting in a reduced bill of materials and therefore lower climate impact.
Author(s)
Basler, Michael  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Mönch, Stefan  orcid-logo
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Reiner, Richard  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Benkhelifa, Fouad  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Quay, Rüdiger  orcid-logo
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Journal
Electronics. Online journal  
Open Access
File(s)
Download (5.14 MB)
Rights
CC BY 4.0: Creative Commons Attribution
DOI
10.3390/electronics13071351
10.24406/h-466778
Additional link
Full text
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • gallium nitride

  • power integrated circuits

  • monolithic integrated circuits

  • DC-DC converters

  • life cycle assessmment

  • environmental factors

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