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  4. 300 mm Czochralski Growth of Silicon Ingots: Challenges for Solar Application
 
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2023
Presentation
Title

300 mm Czochralski Growth of Silicon Ingots: Challenges for Solar Application

Title Supplement
Presentation held at 9th International Scientific Colloquium "Modelling for Materials Processing" 2023, Riga, Latvia, September 18-19, 2023
Other Title
300 mm silicon mono Czochralski crystals: parameters and conditions for crystal growth
Abstract
Growing 300mm silicon mono ingots for solar applications poses several challenges. Due to economic reasons, a magnet is not available at the crystal puller, yet fast crystallization is required without compromising the yield. The process window for growth conditions and control parameters is narrow and requires precise examination. Several 300mm experiments were conducted at the Fraunhofer CSP, and the results will be presented, showcasing the current state of process development. The findings reveal a significant correlation between stable growth conditions, process parameters, shoulder growth, control parameters and the process yield. A scientific and methodological approach can be used to optimize these parameters, which can be further addressed through 3D Multiphysics simulations.
Author(s)
Zobel, Frank  
Fraunhofer-Institut für Solare Energiesysteme ISE  
Dold, Peter
Fraunhofer-Center für Silizium-Photovoltaik CSP
Conference
International Scientific Colloquium "Modelling for Materials Processing" 2023  
Publication available upon request:
bibliothek@ise.fraunhofer.de
Language
English
Fraunhofer-Institut für Solare Energiesysteme ISE  
Keyword(s)
  • Ga-doped Cz-Si

  • Silicon

  • silicon solar cell

  • wafer size

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