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  4. InGaAs HEMT Technology for Submillimeter-Wave and Ultra-Wideband Monolithic Integrated Circuits
 
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2023
Conference Paper
Title

InGaAs HEMT Technology for Submillimeter-Wave and Ultra-Wideband Monolithic Integrated Circuits

Abstract
This paper presents recent results in our in-house 35-nm gate-length metamorphic high-electron-mobility transistor (mHEMT) technology and the more-recent 20-nm gatelength InGaAs-on-insulator HEMT technology. Targeting highest operating frequencies for cutting-edge sensitive receiver systems, demonstrated circuits comprise amplifiers up to 700 GHz with more than 30 dB of small-signal gain. Furthermore, the paper presents state-of-the-art distributed amplifier circuits for a multitude of wideband system applications and the generation of high output power at frequencies of beyond 300 GHz. Presented amplifier circuits exhibit an output power of more than 10 dBm over an operating frequency of 75-305 GHz.
Author(s)
Thome, Fabian  orcid-logo
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
John, Laurenz  orcid-logo
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Gashi, Bersant  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Tessmann, Axel  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Leuther, Arnulf  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Chartier, Sébastien
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Mainwork
IGARSS 2023, IEEE International Geoscience and Remote Sensing Symposium. Proceedings  
Conference
International Geoscience and Remote Sensing Symposium 2023  
DOI
10.1109/IGARSS52108.2023.10282876
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • Distributed amplifiers (DAs)

  • highelectron-mobility transistors (HEMTs)

  • low-noise amplifiers (LNAs)

  • metamorphic HEMTs (mHEMTs)

  • millimeter wave (mmW)

  • monolithic microwave integrated circuits (MMICs)

  • terahertz monolithic integrated circuits (TMICs)

  • travelingwave amplifiers (TWAs)

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