Advanced mHEMT Technologies for Use in Radar, Communication and Meteorological Applications

Three sub-100 nm metamorphic high electron mobility transistor (mHEMT) technologies have been developed for use in next-generation radar, communication and meteorological applications at millimeter wave and submillimeter wave frequencies. The advanced mHEMT technologies feature a gate-length of 50, 35 and 20 nm in combination with a high In-content In(0.80)Ga(0.20)As channel, thus enabling excellent extrinsic transit frequencies f(T) up to 600 GHz and maximum oscillation frequencies fmax of more than 1 THz. Based on these technologies, we could successfully realize a variety of ultra-broadband state of the art low-noise and power amplifiers as well as multifunctional transmitter and receiver circuits, demonstrating very low noise figure (NF = 1.7 dB @ 75-110 GHz), high output power (Pout > 10 mW @ 75-305 GHz) and high small-signal gain (S21 = 33 dB @ 730 GHz).