Power Module Design for GaN Transistors Enabling High Switching Speed in Multi-Kilowatt Applications

The advantages of gallium nitride (GaN) and silicon carbide (SiC) transistors over silicon (Si) devices are highlighted. The design criteria for power modules in multi-kilowatt applications to effectively leverage these advantages are described. Various concepts to overcome limitations associated with state-of-the-art power module packaging presented in the literature are summarized and evaluated. A novel power module design comprising a 650V, 300A half-bridge with integrated DC-link and gate drivers is proposed. The results of a finite element analysis (FEA) of its parasitic elements and subsequent double pulse test simulation are presented.