Options
2022
Conference Paper
Titel
Roadmap for Ferroelectric Memory: Challenges and Opportunities for IMC Applications
Abstract
CMOS compatibility and the low process temperature of hafnium oxide (HfO2) make HfO_2 -based ferroelectric FETs an excellent candidate for logic, memory, and neuromorphic devices. This article discusses the challenges and opportunities of using hafnium oxide-basedferroelectric memory for in-memory-computing applications. Finally, we try to draw the roadmap for them.
Author(s)
Konferenz