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  4. Fully Integrated Back-Biased 3d Hall Sensor with Wafer-Level Integrated Permanent Micromagnets
 
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2023
Conference Paper
Title

Fully Integrated Back-Biased 3d Hall Sensor with Wafer-Level Integrated Permanent Micromagnets

Abstract
This paper reports on a 3D Hall sensor back-biased by rare-earth micromagnets which are integrated directly into the silicon substrate using a wafer-level fabrication process, called PowderMEMS. For the first time, the technique is used to realize a fully integrated back-biased magnetic field sensor. The feasibility of the approach is proven by measurements of the motion of a rotating gear wheel which represents a typical back bias application. Additionally, the ability of the approach to create optimal magnetic field geometries for magnetically biased sensors is demonstrated.
Author(s)
Gojdka, Björn
Fraunhofer-Institut für Siliziumtechnologie ISIT  
Cichon, Daniel  
Fraunhofer-Institut für Integrierte Schaltungen IIS  
Stahl-Offergeld, Markus  
Fraunhofer-Institut für Integrierte Schaltungen IIS  
Schröder, Dominik
Fraunhofer-Institut für Elektronische Nanosysteme ENAS  
Clausen, Niels
Fraunhofer-Institut für Siliziumtechnologie ISIT  
Hedayat, Christian  
Fraunhofer-Institut für Elektronische Nanosysteme ENAS  
Hohe, Hans-Peter  
Fraunhofer-Institut für Integrierte Schaltungen IIS  
Lisec, Thomas  
Fraunhofer-Institut für Siliziumtechnologie ISIT  
Mainwork
IEEE 36th International Conference on Micro Electro Mechanical Systems, MEMS 2023  
Conference
International Conference on Micro Electro Mechanical Systems Conference 2023  
DOI
10.1109/MEMS49605.2023.10052184
Language
English
Fraunhofer-Institut für Siliziumtechnologie ISIT  
Fraunhofer-Institut für Integrierte Schaltungen IIS  
Fraunhofer-Institut für Elektronische Nanosysteme ENAS  
Keyword(s)
  • back bias

  • Hall sensor

  • Integrated micromagnets

  • magnetic bias

  • magnetic field shaping

  • wafer-level integration

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