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  4. 22-nm FDSOI CMOS Noise Modeling and Analysis in mm-Wave Frequency Range
 
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2023
Conference Paper
Title

22-nm FDSOI CMOS Noise Modeling and Analysis in mm-Wave Frequency Range

Abstract
This paper presents the modeling and analysis of the high-frequency noise in 22-nm FDSOI CMOS technology. Experimental noise parameters up to 170 GHz of a multi-finger n-channel transistor are extracted by utilizing the tuner-based method. The Pucel (PRC) noise model is applied and validated for prediction of 22-nm FDSOI noise characteristics from low frequencies to D-band frequencies. In addition, extraction and analysis of the model parameters versus drain current at the W-band frequency 94 GHz are demonstrated.
Author(s)
Le, Quang Huy
Fraunhofer-Institut für Photonische Mikrosysteme IPMS  
Huynh, Dang Khoa
Fraunhofer-Institut für Photonische Mikrosysteme IPMS  
Lehmann, Steffen
Zhao, Zhixing
Schwan, Christoph T.
Kämpfe, Thomas  orcid-logo
Fraunhofer-Institut für Photonische Mikrosysteme IPMS  
Rudolph, Matthias
Mainwork
IEEE 23rd Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems 2023  
Project(s)
Building the fullyEuropean supplYchain on RFSOI, enabling NewRFDomains forSensing, Communication,5G and beyond  
Funder
European Commission  
Conference
Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems 2023  
Radio and Wireless Week 2023  
DOI
10.1109/SiRF56960.2023.10046210
Language
English
Fraunhofer-Institut für Photonische Mikrosysteme IPMS  
Keyword(s)
  • 22 nm

  • FDSOI

  • mm-wave

  • noise

  • Pucel model

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