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  4. A Differential SiGe HBT Doherty Power Amplifier for Automotive Radar at 79 GHz
 
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2023
Conference Paper
Title

A Differential SiGe HBT Doherty Power Amplifier for Automotive Radar at 79 GHz

Abstract
In this paper, a differential Doherty power amplifier for automotive applications in a 130nm SiGe BiCMOS technology, featuring ft/fmax of 470/650 GHz, is presented. The amplifier achieves a measured, peak power added efficiency of 11.6% with 17.0dBm saturated output power at a frequency of 79GHz. In the 6dB power back-off, the proposed amplifier offers a power added efficiency of 6.1%. For comparison, a reference Class-A amplifier has been designed that achieves an output power of 7.2dBm at the 6dB power back-off with a power added efficiency of 1.8%. Compared to other state-of-the-art Doherty approaches, the proposed architecture first time proves the traditional transmission line-based impedance inversion in the automotive frequency range from 76GHz to 81GHz.
Author(s)
Schoepfel, Jan
Rücker, Holger
Pohl, Nils  
Fraunhofer-Institut für Hochfrequenzphysik und Radartechnik FHR  
Mainwork
IEEE 23rd Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems 2023  
Conference
Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems 2023  
Radio and Wireless Week 2023  
DOI
10.1109/SiRF56960.2023.10046275
Language
English
Fraunhofer-Institut für Hochfrequenzphysik und Radartechnik FHR  
Keyword(s)
  • Doherty

  • millimeter wave integrated circuits

  • power amplifiers

  • Silicon germanium (SiGe)

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