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  4. Integrated 64 pixel UV image sensor and readout in a silicon carbide CMOS technology
 
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2022
Journal Article
Title

Integrated 64 pixel UV image sensor and readout in a silicon carbide CMOS technology

Abstract
This work demonstrates the first on-chip UV optoelectronic integration in 4H-SiC CMOS, which includes an image sensor with 64 active pixels and a total of 1263 transistors on a 100 mm2 chip. The reported image sensor offers serial digital, analog, and 2-bit ADC outputs and operates at 0.39 Hz with a maximum power consumption of 60 μW, which are significant improvements over previous reports. UV optoelectronics have applications in flame detection, satellites, astronomy, UV photography, and healthcare. The complexity of this optoelectronic system paves the way for new applications such harsh environment microcontrollers.
Author(s)
Romijn, Joost
Vollebregt, Sten
Middelburg, Luke M.
Mansouri, Brahim El
Zeijl, Henk W. van
May, Alexander  
Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB  
Erlbacher, Tobias  
Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB  
Leijtens, Johan A.P.
Zhang, Guoqi
Sarro, Pasqualina Maria
Journal
Microsystems & nanoengineering  
Open Access
DOI
10.1038/s41378-022-00446-3
Language
English
Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB  
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