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  4. Growth of Highly Doped Silicon Cz-Monocrystals with Alternate Doping Substances
 
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2022
Presentation
Title

Growth of Highly Doped Silicon Cz-Monocrystals with Alternate Doping Substances

Title Supplement
Presentation held at the 19th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors, 29th August - 1st September 2022, Online
Abstract
Low resistivity silicon wafers are needed for several substrate materials in semiconductor manufacturing and in the solar industry. Conventionally this is achieved by adding pure boron into the melt. Especially for solar application the costs for pure boron are relatively high. So, the idea is to substitute pure Boron by other substance like boric acid. Two different experiments of Czochralski (Cz) crystal growth with alternative dopants were carried out at Fraunhofer CSP. The different dopants were added to the silicon while charging the machine.
Author(s)
Zobel, Frank  
Fraunhofer-Institut für Solare Energiesysteme ISE  
Kunert, Roland
Fraunhofer-Institut für Solare Energiesysteme ISE  
Dold, Peter
Fraunhofer-Institut für Solare Energiesysteme ISE  
Conference
International Conference on Defects-Recognition, Imaging and Physics in Semiconductors 2022  
Request publication:
bibliothek@ise.fraunhofer.de
Language
English
Fraunhofer-Institut für Solare Energiesysteme ISE  
Keyword(s)
  • Boron

  • crystallization

  • Doping

  • Ga-doped Cz-Si

  • Silicon

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