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  4. Ferroelectric Content-Addressable Memory Cells with IGZO Channel: Impact of Retention Degradation on the Multibit Operation
 
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2023
Journal Article
Title

Ferroelectric Content-Addressable Memory Cells with IGZO Channel: Impact of Retention Degradation on the Multibit Operation

Abstract
Indium gallium zinc oxide (IGZO)-based ferroelectric thin-film transistors (FeTFTs) are being vigorously investigated for being deployed in computing-in-memory (CIM) applications. Content-addressable memories (CAMs) are the quintessential example of CIM, which conduct a parallel search over a queue or stack to obtain the matched entries for a given input data. CAM cells offer the ability for massively parallel searches in a single clock cycle throughout an entire CAM array for the input query, thereby enabling pattern matching and searching functionality. Therefore, CAM cells are used extensively for pattern matching or search operations in data-centric computing. This paper investigates the impact of retention degradation on IGZO-based FeTFT on the multibit operation in content CAM cell applications. We propose a scalable multibit 1FeTFT-1T-based CAM cell composed of only one FeTFT and one transistor, thus significantly improving the density and energy efficiency compared with conventional complementary metal-oxide-semiconductor (CMOS)-based CAM. We successfully demonstrate the operations of our proposed CAM with storage and search by exploiting the multilevel states of the experimentally calibrated IGZO-based FeTFT devices. We also investigate the impact of retention degradation on the search operation. Our proposed IGZO-based 3-bit and 2-bit CAM cell shows 104 s and 106 s retention, respectively. The single-bit CAM cell shows lifelong (10 years) retention.
Author(s)
Sk, Masud Rana
Indian Institute of Technology Madras, Chennai, 600036, India
Thunder, Sunanda
Fraunhofer-Institut für Photonische Mikrosysteme IPMS  
Lehninger, David
Fraunhofer-Institut für Photonische Mikrosysteme IPMS  
Raffel, Yannick
Fraunhofer-Institut für Photonische Mikrosysteme IPMS  
Lederer, Maximilian
Fraunhofer-Institut für Photonische Mikrosysteme IPMS  
Jank, Michael  
Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB  
Kämpfe, Thomas  orcid-logo
Fraunhofer-Institut für Photonische Mikrosysteme IPMS  
De, Sourav
Fraunhofer-Institut für Photonische Mikrosysteme IPMS  
Chakrabarti, Bhaswar
Journal
ACS Applied Electronic Materials  
Project(s)
Technology and hardware for neuromorphic computing  
Ai for New Devices And Technologies at the Edge  
Funding(s)
H2020-EU.2.1.1.  
Funder
European Commission  
European Commission  
Open Access
DOI
10.1021/acsaelm.2c01357
Additional full text version
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Language
English
Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB  
Fraunhofer-Institut für Photonische Mikrosysteme IPMS  
Keyword(s)
  • computing-in-memory (CIM)

  • content-addressable memory (CAM)

  • ferroelectric memory

  • FeTFT

  • HZO

  • IGZO

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