Analytical model of free charge transfer in charge-coupled devices

A one-dimensional analytical model of charge transfer in charge-coupled devices, which describes the spatial-temporal behavior of the charge carrier density in a potential well, is presented. The general solution of this model considers the transfer dynamics in terms of the electric drift field, i.e., self-induced drift and fringing-field drift, and yields an analytical solution for the total number of charge carriers. A comparison of the transfer efficiency for various electric drift fields is presented. The modulation transfer function in dependence on the transfer efficiency is analyzed, aiming especially at time-delay integration (TDI) applications. Finally, the results of this model are concluded and discussed in detail.