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2022
Conference Paper
Titel
High-Rate Sputter Etching of Substrates Using Hollow-Cathode Arc Discharge Sources
Abstract
A high-quality vacuum deposition demands an intensive in-line pretreatment. For highly productive and cost-effective processes with high material throughput high etch rates are required. Therefore, a sputter etching process for metal substrates based on hollow-cathode arc discharge plasma sources has been developed. By applying an additional magnetic field, the plasma column can be extended to operating distances of up to one meter. The influence of different parameters (discharge current, gas flow, bias voltage) on the ion current density and etch rate will be presented. The acceleration voltage for argon ions is applied to the plasma source. Consequently, the substrates can remain on ground potential. This presents an advantageous simplification for the equipment design. The developed assembly is predestined for installations in high throughput vacuum production lines. The arc discharge current was increased to 200 A, resulting in a power of up to 30 kW. Ion currents with a density of up to 50 mA/cm2 could be extracted from the plasma zone to the substrate. Etch rates of 40 nm/s were achieved on copper substrates.