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  4. Effects of sub-picosecond direct laser interference patterning on the optoelectronic properties of fluorine-doped tin oxide thin films
 
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2022
Journal Article
Title

Effects of sub-picosecond direct laser interference patterning on the optoelectronic properties of fluorine-doped tin oxide thin films

Abstract
Micropatterning of metal oxides is of high interest for structuring electrodes in optoelectronic devices. In this work, the impact of infrared (IR) sub-picosecond Direct Laser Interference Patterning (DLIP) on the surface morphology, surface chemistry, optical and electrical properties of Fluorine-doped Tin Oxide (FTO) is studied. The topography characterization reveals periodic microchannels with an average height between 15 and 600 nm, depending on the applied laser fluence, decorated with Laser-Induced Periodic Surface Structures (LIPSS). The doping by aliovalent Sn atoms induced by non-linear IR absorption were revealed by X-ray Photoemission Spectroscopy (XPS) analysis. An increase in the average diffuse optical transmittance up to 730% was obtained in the spectral range 400-1000 nm as a consequence of the interaction of white light with the periodic micro- and nanostructures. The one-dimensionality of the microstructures caused a significant anisotropic electrical behavior, and an enhancement of the conductivity of up to 50% was obtained following the direction of the microchannels of the patterned films as compared to the unstructured material. Our results demonstrate that DLIP is a powerful technique for future application in structuring electrodes for highly efficient optoelectronic devices and sensors.
Author(s)
Heffner, Herman
TU Dresden  
Soldera, Marcos
TU Dresden  
Schell, Frederic  orcid-logo
Fraunhofer-Institut für Werkstoff- und Strahltechnik IWS  
Deconinck, Marielle
TU Dresden  
Vaynzof, Yana
TU Dresden  
Mulko, Lucinda
TU Dresden  
Lasagni, Andrés-Fabián  
Fraunhofer-Institut für Werkstoff- und Strahltechnik IWS  
Journal
Journal of materials chemistry. C, Materials for optical and electronic devices  
DOI
10.1039/D2TC04155C
Language
English
Fraunhofer-Institut für Werkstoff- und Strahltechnik IWS  
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