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  4. Refractive Index of In1-x-yAlyGaxAs Lattice-Matched to InP
 
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2022
Journal Article
Title

Refractive Index of In1-x-yAlyGaxAs Lattice-Matched to InP

Abstract
From ellipsometric measurements of eight different In1-x-yAlyGaxAs grown semiconductor compositions, the parameters for the Tanguy model are fitted for each composition. From the fitted parameters, a generalized parameter set is derived for In1-x-yAlyGaxAs compound semiconductors, being lattice-matched to InP. Due to the generalized parameter set, the wavelength dependent refractive index and absorption in the transparent and absorbing NIR and SWIR wavelength regime can be modeled.
Author(s)
Runge, Patrick  
Fraunhofer-Institut für Nachrichtentechnik, Heinrich-Hertz-Institut HHI  
Seifert, Sten
Fraunhofer-Institut für Nachrichtentechnik, Heinrich-Hertz-Institut HHI  
Journal
IEEE Photonics Technology Letters  
DOI
10.1109/LPT.2022.3166848
Language
English
Fraunhofer-Institut für Nachrichtentechnik, Heinrich-Hertz-Institut HHI  
Keyword(s)
  • absorption

  • compound semiconductor

  • indium aluminum arsenide

  • indium phosphide

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