2022
Conference Paper
Title

A Study of High Resistivity Semi-Insulating 4H-SiC Epilayers Formed via the Implantation of Germanium and Vanadium

Abstract
A systematic germanium (Ge) and vanadium (V) study on 4H-SiC epitaxial layers is presented. Electrical results of TLM structures which were fabricated on these layers revealed that highly-doped Ge and V-implanted layers showed extremely low specific contact resistivity, down to 2 x 10-7 Ω.cm2 . Current flow in the conducting state of Schottky barrier diodes has been successfully suppressed in some implanted layers, with highly V doped samples showing current density values of approximately 1 x 10-5 Acm-2 at 10 V. DLTS spectra reveal the presence of germanium and vanadium centers in the respective samples as well as novel peaks which are likely related to the formation of a novel GeN center.
Author(s)
Renz, A.B.
University of Warwick, School of Engineering
Vavasour, O.J.
University of Warwick, School of Engineering
Rommel, Mathias  orcid-logo
Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB  
Baker, G.W.C.
University of Warwick, School of Engineering
Gammon, P.M.
University of Warwick, School of Engineering
Dai, T.
University of Warwick, School of Engineering
Li, F.
University of Warwick, School of Engineering
Antoniou, M.
University of Warwick, School of Engineering
Mawby, P.A.
University of Warwick, School of Engineering
Shah, V.A.
University of Warwick, School of Engineering
Mainwork
Conference
Open Access
DOI
Language
English
Keyword(s)