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  4. An advanced Bragg diffraction imaging technique to characterize defects in SiC and GaN : Topic/category, e.g. AM: Advanced Metrology
 
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2022
Conference Paper
Title

An advanced Bragg diffraction imaging technique to characterize defects in SiC and GaN : Topic/category, e.g. AM: Advanced Metrology

Abstract
An advanced X-ray Bragg diffraction imaging technique known as Rocking Curve Imaging (RCI) was implemented and developed at the European Synchrotron Radiation Facility (ESRF) for the characterization of defects in bulk crystals and crystalline layers. We describe the technical aspects of RCI and show, as examples, results of its application to the observation of the long-range distortion field between parallel dislocations with opposite Burgers vectors that are often present in SiC, and the growth defects in ammonothermally grown GaN crystals. RCI allows obtaining unique results because of its sub-μm spatial resolution and its μradian range angular resolution.
Author(s)
Caliste, Thu Nhi Tran Thi
European Synchrotron Radiation Facility (ESRF), Grenoble, France
Kirste, Lutz  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Drouin, Alexis
Soitec SA, France
Baruchel, Jose
European Synchrotron Radiation Facility (ESRF), Grenoble, France
Mainwork
33rd Annual SEMI Advanced Semiconductor Manufacturing Conference 2022  
Conference
Advanced Semiconductor Manufacturing Conference 2022  
DOI
10.1109/ASMC54647.2022.9792499
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
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