On the Reverse Breakdown Behavior of GaAs PIN Diodes for High Power Applications

In the field of power electronics, the compound semiconductors gallium ni tride and silicon carbide are dominating the market. Due to its beneficial properties, gallium arsenide is gaining more and more importance. The aim is to manufacture devices based on gallium arsenide for use in power electronics with comparable or better properties, but at lower costs. In this work, a first GaAs PIN diode for 900 V operation is fabricated and charac terized. The temperature-dependent reverse breakdown behavior is investigated with the help of TCAD simulations and high-voltage measurements. Based on these results, an analytical model is generated which can reproduce this behavior. This enables further optimization of the GaAs PIN diode to optimally meet customer’s needs.