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  4. Nano-CT imaging of electrically stressed power device metallization
 
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2021
Conference Paper
Title

Nano-CT imaging of electrically stressed power device metallization

Abstract
In this paper, we show that nano-CT imaging can provide detailed information on the degradation that occurs in power device metallization during a fast PTC stress. Nano-CT imaging provides a high resolution, 3D imaging method to understand degradation mechanisms in packaged power semiconductor devices.
Author(s)
Mueller, D.
Fella, C.
Altmann, F.
Graetz, J.
Balles, A.
Ring, M.
Gambino, J.
Mainwork
IEEE 28th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2021  
Conference
International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) 2021  
DOI
10.1109/IPFA53173.2021.9617279
Language
English
Fraunhofer-Institut für Mikrostruktur von Werkstoffen und Systemen IMWS  
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