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  4. Preferential Placement of Aligned Nitrogen Vacancy Centers in Chemical Vapor Deposition Overgrown Diamond Microstructures
 
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2022
Journal Article
Titel

Preferential Placement of Aligned Nitrogen Vacancy Centers in Chemical Vapor Deposition Overgrown Diamond Microstructures

Abstract
The usefulness of nitrogen vacancy (NV) centers in diamond is augmented by a low defect and impurity density in the surrounding host material, and applications benefit from the ability to control the position of the NV centers. Herein, a process to create NV centers on single-crystalline diamond microstructures by chemical vapor deposition (CVD) is presented. Pyramidal structures with {111} side facets are formed during the intrinsic overgrowth of dry chemically etched cylindrical pillars on a substrate with {100} surface orientation. A thin nitrogen-doped epitaxial layer is deposited on top of the pyramids resulting in the creation of NV centers exclusively on the {111} pyramid side faces. Optically detected magnetic resonance (ODMR) and spin echo measurements reveal preferential alignment of the NV centers in a single {111} direction and a 𝑇2 time of 55 ms . The 𝑇2 time of the NV centers is limited by the surrounding substitutional nitrogen (P1 center) concentration of [P1] = 5 ppm . A low density of other paramagnetic spin noise is detected by double-electron electron resonance (DEER) measurements.
Author(s)
Giese, Christian
INATECH
Götze, Arne
NVision Imaging Technologies GmbH
Knittel, Peter orcid-logo
NVision Imaging Technologies GmbH
Marshall, Alastair
NVision Imaging Technologies GmbH
Neumann, Philipp
Fraunhofer-Institut für Angewandte Festkörperphysik IAF
Quellmalz, Patricia orcid-logo
Fraunhofer-Institut für Angewandte Festkörperphysik IAF
Striegler, Nico
Fraunhofer-Institut für Angewandte Festkörperphysik IAF
Zeitschrift
Physica status solidi. Rapid research letters
DOI
10.1002/pssr.202100373
File(s)
N-647022.pdf (1.11 MB)
Language
English
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Fraunhofer-Institut für Angewandte Festkörperphysik IAF
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