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  4. Structural Analysis of Low Defect Ammonothermally Grown GaN Wafers by Borrmann Effect X-ray Topography
 
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2021
Journal Article
Titel

Structural Analysis of Low Defect Ammonothermally Grown GaN Wafers by Borrmann Effect X-ray Topography

Abstract
X-ray topography defect analysis of entire 1.8-inch GaN substrates, using the Borrmann effect, is presented in this paper. The GaN wafers were grown by the ammonothermal method. Borrmann effect topography of anomalous transmission could be applied due to the low defect density of the substrates. It was possible to trace the process and growth history of the GaN crystals in detail from their defect pattern imaged. Microscopic defects such as threading dislocations, but also macroscopic defects, for example dislocation clusters due to preparation insufficiency, traces of facet formation, growth bands, dislocation walls and dislocation bundles, were detected. Influences of seed crystal preparation and process parameters of crystal growth on the formation of the defects are discussed.
Author(s)
Kirste, Lutz
Fraunhofer-Institut für Angewandte Festkörperphysik IAF
Grabianska, Karolina
Institute of High-Pressure Physics of the Polish Academy of Sciences
Kucharski, Robert
Institute of High-Pressure Physics of the Polish Academy of Sciences
Sochacki, Tomasz
Institute of High-Pressure Physics of the Polish Academy of Sciences
Lucznik, Boleslaw
Institute of High-Pressure Physics of the Polish Academy of Sciences
Bockowski, Michael
Institute of High-Pressure Physics of the Polish Academy of Sciences and Center for Integrated Research of Future Electronics
Zeitschrift
Materials
DOI
10.3390/ma14195472
File(s)
N-647366.pdf (5.46 MB)
Language
English
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Fraunhofer-Institut für Angewandte Festkörperphysik IAF
Tags
  • GaN

  • crystal growth

  • ammonothermal method

  • defects

  • x-ray topography

  • borrmann effect

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