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  4. Stable Reverse Bias or Integrated Bypass Diode in HIP-MWT+ Solar Cells Based on Different Industrial Rear Passivation
 
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2021
Conference Paper
Titel

Stable Reverse Bias or Integrated Bypass Diode in HIP-MWT+ Solar Cells Based on Different Industrial Rear Passivation

Abstract
The Metal Wrap Through+ (HIP-MWT+) solar cell is based on the PERC concept but features two additional electrical contacts, namely the Schottky contact between p-type Si bulk and Ag n-contact and the metal-insulator-semiconductor (MIS) contact on the rear side of the cell below the n-contact pads. To prevent hotspots under reverse bias, both contacts shall either restrict current flow or allow a homogenous current flow at low voltage. In this work we present both options. First the stable reverse bias characteristics up to - 15 V with a MIS contact using industrially manufactured SiON passivation and second, an integrated by-pass diode using AlOX as insulator in the passivation stack allowing current flows at approximately Vrev = - 3.5 V depending on the chosen screen-print paste. The examined Schottky contacts break down at around Vrev = - 2.5 V. Reverse bias testing of the cells proof a solid performance of the cells under reverse bias and an average conversion efficiency of = 21.2 % (AlOX) and = 20.7 % (SiON), respectively.
Author(s)
Schweigstill, T.
Spribille, A.
Huyeng, J.D.
Clement, F.
Glunz, S.W.
Hauptwerk
38th European Photovoltaic Solar Energy Conference and Exhibition, EU PVSEC 2021
Konferenz
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) 2021
DOI
10.4229/EUPVSEC20212021-2CO.10.2
File(s)
N-644460.pdf (318.38 KB)
Language
English
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Fraunhofer-Institut für Solare Energiesysteme ISE
Tags
  • Photovoltaik

  • back contact

  • MWT solar cells

  • passivation

  • PERC

  • Silicium-Photovoltaik

  • Metallisierung und Strukturierung

  • Herstellung und Analyse von hocheffizienten Si-Solarzellen

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