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  4. Modeling the temperature-dependent reverse breakdown behavior of GaAs PIN diodes
 
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2021
  • Konferenzbeitrag

Titel

Modeling the temperature-dependent reverse breakdown behavior of GaAs PIN diodes

Abstract
The demands on modern electronics are constantly increasing. In the field of power electronics, the semiconductor material gallium arsenide (GaAs) is gaining more and more popularity. In this work, a first GaAs PIN Diode for 900 V operation is under investigation. With the help of simulations and measurements, the temperature-dependent reverse breakdown behavior is investigated. An analytical model will be presented, which can reproduce this behavior.
Author(s)
Scharf, Patrick
Fraunhofer-Institut fĂ¼r Integrierte Schaltungen IIS
Velarde Gonzalez, Fabio A.
Fraunhofer-Institut fĂ¼r Integrierte Schaltungen IIS
Lange, André
Fraunhofer-Institut fĂ¼r Integrierte Schaltungen IIS
Dietrich, M.
Dudek, V.
Hauptwerk
International Semiconductor Conference, CAS 2021
Konferenz
International Semiconductor Conference (CAS) 2021
DOI
10.1109/CAS52836.2021.9604151
File(s)
N-643681.pdf (641.27 KB)
Language
Englisch
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EAS
Tags
  • GaAs

  • PiN diode

  • reverse breakdown

  • HV measurements

  • analytical model

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