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  4. Revised Parametrization of the Recombination Velocity at SiO2/SiNX-Passivated Phosphorus-Diffused Surfaces
 
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2021
Presentation
Title

Revised Parametrization of the Recombination Velocity at SiO2/SiNX-Passivated Phosphorus-Diffused Surfaces

Title Supplement
Presentation held at 11th SiliconPV 2021, Hamelin, Germany, online event, 19.04.2021-23.04.2021
Author(s)
Wolf, Andreas  
Egle, J.
Mack, Sebastian  
Höffler, Hannes  
Herrmann, D.
Lohmüller, Sabrina  
Horzel, Jörg
Fell, Andreas  
Conference
International Conference on Crystalline Silicon Photovoltaics (SiliconPV) 2021  
DOI
10.24406/publica-fhg-412456
File(s)
N-640762.pdf (1.94 MB)
Rights
Under Copyright
Language
English
Fraunhofer-Institut für Solare Energiesysteme ISE  
Keyword(s)
  • Photovoltaik

  • silicon solar cell

  • Silicium-Photovoltaik

  • Dotierung und Diffusion

  • Oberflächen: Konditionierung

  • Passivierung

  • Lichteinfang

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