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  4. Revised Parametrization of the Recombination Velocity at SiO2/SiNX-Passivated Phosphorus-Diffused Surfaces
 
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2021
Presentation
Title

Revised Parametrization of the Recombination Velocity at SiO2/SiNX-Passivated Phosphorus-Diffused Surfaces

Title Supplement
Presentation held at 11th SiliconPV 2021, Hamelin, Germany, online event, 19.04.2021-23.04.2021
Author(s)
Wolf, Andreas  
Egle, J.
Mack, Sebastian  
Höffler, Hannes  
Herrmann, D.
Lohmüller, Sabrina  
Horzel, Jörg
Fell, Andreas  
Conference
International Conference on Crystalline Silicon Photovoltaics (SiliconPV) 2021  
File(s)
Download (1.94 MB)
Rights
Use according to copyright law
DOI
10.24406/publica-fhg-412456
Language
English
Fraunhofer-Institut für Solare Energiesysteme ISE  
Keyword(s)
  • Photovoltaik

  • silicon solar cell

  • Silicium-Photovoltaik

  • Dotierung und Diffusion

  • Oberflächen: Konditionierung

  • Passivierung

  • Lichteinfang

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