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  4. Efficiency Potential Analysis of p- and n-Type Epitaxially Grown Si Wafers
 
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2021
  • Konferenzbeitrag

Titel

Efficiency Potential Analysis of p- and n-Type Epitaxially Grown Si Wafers

Abstract
In this paper, we investigate the quality of epitaxially grown, 110 mm thick, n- and p-type silicon (Si) layers deposited in a CVD batch reactor of microelectronic standard. Two types of wafers are characterized: 'EpiRef' grown on chemically and mechanically polished reference substrates and 'EpiWafer' grown on substrates with a porous silicon detachment layer. EpiRef wafers exhibit excellent minority carrier lifetimes of 2.5 ms for n-type and 1.3 ms for p-type. EpiWafers show reduced, but still promising lifetimes of 0.5 ms (in local areas up to 1 ms) for n-type and 40 ms for p-type. For EpiWafers, we found that quality limitations are due to stacking faults as well as interstitial iron contamination for p-type. An efficiency limiting bulk recombination analysis (ELBA), allows for an assessment of the corresponding efficiency potential assuming a TOPCon cell model with a cell limit of 25.9 % for n-type and a TOPCoRE cell model with a cell limit of 26.5 % for p-type. In selected 1 cm² areas, potential efficiencies of EpiRef wafers are only -0.4 %abs below the theoretical cell limit for n-type and -1.3 %abs for p-type whereas EpiWafers feature losses of -1.2 %abs for n-type and even -5.4 %abs for p-type.
Author(s)
Rittmann, C.
Dalke, J.
Drießen, M.
Weiss, C.
Schindler, F.
Sorgenfrei, R.
Schubert, M.C.
Janz, S.
Hauptwerk
38th European Photovoltaic Solar Energy Conference and Exhibition, EU PVSEC 2021
Konferenz
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) 2021
File(s)
N-640780.pdf (1.16 MB)
Language
Englisch
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ISE
Tags
  • Photovoltaik

  • Silicium-Photovoltaik...

  • feedstock

  • Kristallisation

  • wafering

  • Epitaxie

  • Si-Folien und SiC-Abs...

  • Charakterisierung von...

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