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  4. Low-cost Cu-plated metallization on TCOs for SHJ Solar Cells - Optimization of PVD Contacting-layer
 
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2020
  • Konferenzbeitrag

Titel

Low-cost Cu-plated metallization on TCOs for SHJ Solar Cells - Optimization of PVD Contacting-layer

Abstract
Our novel metallization approach for silicon heterojunction (SHJ) solar cells takes advantage of a PVD metal-stack covered with a structured self-passivated Al layer as mask for electroplating a Cu grid. This plating metallization route enables a very low cost of ownership (COO) for SHJ solar cell back-end processing for busbars interconnection. Encouraging efficiencies of 22.1% are reached with FF > 81% and R s down to 0.39 O·cm 2 on large area. A variation of the contact layer to ITO shows that of the investigated materials, TiW reached a sufficiently low contact resistivity down to 0.7 ± 0.3 mO·cm 2 while for pure Ti it was too low to be measured (0.1 ± 0.3 mO-cm 2 ). High busbar peel-off forces above 3 N/mm (Ti) are demonstrated.. Furthermore, a carefully adjusted etch-back procedure proves that AZO can be combined with our plated metallization to manufacture Ag- and In-free SHJ solar cells.
Author(s)
Hatt, T.
Bartsch, J.
Kluska, S.
Nold, S.
Glunz, S.W.
Glatthaar, M.
Hauptwerk
47th IEEE Photovoltaic Specialists Conference, PVSC 2020
Konferenz
Photovoltaic Specialists Conference (PVSC) 2020
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DOI
10.1109/PVSC45281.2020.9300706
Language
Englisch
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