Characteristics of hetero-integrated GaN-HEMTs on CMOS technology by micro-transfer-printing

This work reports on the progress of the hetero-integration of GaN-HEMTs on CMOS wafers by micro-transfer-printing (mTP). 200 V and 600 V class device types are successfully transferred from a GaN-on-Si source wafer to a processed CMOS target wafer. Technologies and process steps of the micro-transfer-printing are briefly discussed. Both device types are characterized, before micro-transfer-printing on the original Si substrate, and after micro-transfer-printing on the CMOS wafer. The comparison discloses the impact of the micro-transfer-print process on the electrical performance.