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  4. Front Side Optimization on Boron- and Gallium-Doped Cz-Si PERC Solar Cells Exceeding 22% Conversion Efficiency
 
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2020
Conference Paper
Title

Front Side Optimization on Boron- and Gallium-Doped Cz-Si PERC Solar Cells Exceeding 22% Conversion Efficiency

Abstract
This work reviews on our industrial-oriented passivated emitter and rear cell (PERC) baseline process for Czochralski-grown silicon (Cz-Si) wafers at the Fraunhofer ISE PV-TEC pilot-line. We perform several front side optimizations based on homogeneous emitter doping: finger width reduction of the screen-printed silver fingers, improved silver paste, and implementation of low-temperature thermal oxidation. This yields peak energy conversion efficiencies of 22.1% for boron-doped Cz-Si from LONGi and 22.2% for gallium-doped Cz-Si from Fraunhofer CSP. We show that gallium-doped Cz-Si wafers offer an industrially feasible option to further improve PERC-type but also other solar cell concepts on p-type Cz-Si. We also demonstrate the possibility to omit regeneration procedures that are needed to suppress the boron-oxygen-related light-induced degradation effects as known for conventional borondoped Cz-Si.
Author(s)
Lohmüller, Elmar  orcid-logo
Greulich, Johannes M.  
Saint-Cast, Pierre  
Lohmüller, Sabrina  
Schmidt, Stefan  
Belledin, Udo  
Fellmeth, Tobias  
Mack, Sebastian  
Emanuel, Gernot  
Krieg, Katrin
Zimmer, Martin  
Kunert, Roland
Zobel, Frank  
Linse, Michael  
Horzel, Jörg
Meßmer, Marius
Wolf, Andreas  
Preu, Ralf  
Mainwork
37th European Photovoltaic Solar Energy Conference and Exhibition, EU PVSEC 2020  
Conference
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) 2020  
DOI
10.4229/EUPVSEC20202020-2DV.3.19
Language
English
Fraunhofer-Institut für Solare Energiesysteme ISE  
Keyword(s)
  • Photovoltaik

  • boron

  • Cz-Si

  • diffusion

  • front side optimization

  • gallium

  • PERC

  • screen printing

  • Silicium-Photovoltaik

  • Charakterisierung von Prozess- und Silicium-Materialien

  • Dotierung und Diffusion

  • Oberflächen: Konditionierung

  • Passivierung

  • Lichteinfang

  • Metallisierung und Strukturierung

  • Pilotherstellung von industrienahen Si-Solarzellen

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