• English
  • Deutsch
  • Log In
    Password Login
    Research Outputs
    Fundings & Projects
    Researchers
    Institutes
    Statistics
Repository logo
Fraunhofer-Gesellschaft
  1. Home
  2. Fraunhofer-Gesellschaft
  3. Konferenzschrift
  4. Transformer-Coupled D-Band PA with 11.8 dBm Psat and 6.3 % PAE in 0.13mm SiGe BiCMOS
 
  • Details
  • Full
Options
2020
Conference Paper
Title

Transformer-Coupled D-Band PA with 11.8 dBm Psat and 6.3 % PAE in 0.13mm SiGe BiCMOS

Abstract
In this paper we present a fully differential power amplifier (PA) in a 0.13 mm SiGe BiCMOS technology operating in D-Band. The PA has a maximum PAE of 6.3 %, a saturated output power of 11.8 dBm at a frequency of 114 GHz and is designed to an optimum load impedance different from 50 O offered by a chip to PCB transition. In the previously designed SiGe BiCMOS PAs for D-Band applications, interstage matching networks consist of transmission lines, whereas in this work a transformer is used because a transformer offers the advantage of being an efficient and compact higher-order filter. Therefore, the amplifier only occupies an active chip area of 0.19 mm 2 including baluns. In CMOS transformer-based coupling between the stages is quite common, whereas in SiGe this has not been demonstrated so far. Accordingly, to the authors best knowledge, this is the first D-Band SiGe PA using transformer-coupling.
Author(s)
Romstadt, J.
Lammert, V.
Pohl, N.
Issakov, V.
Mainwork
IEEE 20th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2020  
Conference
Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) 2020  
DOI
10.1109/SIRF46766.2020.9040185
Language
English
Fraunhofer-Institut für Hochfrequenzphysik und Radartechnik FHR  
  • Cookie settings
  • Imprint
  • Privacy policy
  • Api
  • Contact
© 2024