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  4. Subcell Development for Wafer-Bonded III-V//Si Tandem Solar Cells
 
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2020
  • Konferenzbeitrag

Titel

Subcell Development for Wafer-Bonded III-V//Si Tandem Solar Cells

Abstract
This work focuses on the material properties of two III-V semiconductors, AlGaAs and GaInAsP, and their usage as middle cell absorber materials in a wafer-bonded III-V//Si triple-junction solar cell. To this end single-junction solar cells were grown epitaxially lattice matched on GaAs wafers using metalorganic chemical vapor phase epitaxy (MOVPE). By optimizing the growth temperature and the V/III ratio we could increase the open-circuit voltage at a target absorber bandgap of 1.50 eV by up to 100 mV. In the future these results will be implemented into two-terminal III-V//Si triple-junction solar cells to increase the conversion efficiency beyond the current record of 34.1 % under the AM1.5g solar spectrum.
Author(s)
Schygulla, P.
Heinz, F.
Lackner, D.
Dimroth, F.
Hauptwerk
47th IEEE Photovoltaic Specialists Conference, PVSC 2020
Konferenz
Photovoltaic Specialists Conference (PVSC) 2020
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DOI
10.1109/PVSC45281.2020.9300801
Language
Englisch
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Tags
  • Photovoltaik

  • AlGaAs

  • GaInAsP

  • III-V//Si

  • MOVPE

  • multijunction solar c...

  • III-V- und Konzentrat...

  • III-V Epitaxie und So...

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