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  4. Advances in Epitaxial GaInP/GaAs/Si Triple Junction Solar Cells
 
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2020
Conference Paper
Title

Advances in Epitaxial GaInP/GaAs/Si Triple Junction Solar Cells

Abstract
Epitaxial III-V on silicon multi-junction solar cells allow to increase the conversion efficiency of single-junction silicon devices. We report progress on the development of high-efficiency GaInP/GaAs/Si triple-junction devices over the last two years. The AM1.5g conversion efficiency has been increased from 19.7% to 22.3%, 24.3%, and finally a value of 25.9% could be achieved. The improvement was enabled by a reduction of nucleation-related crystal defects in the silicon to gallium phosphide transition and a reduction of parasitic absorption within the metamorphic GaAsP buffer structure which was limiting the current in the silicon subcell. By increasing the bandgaps in the graded buffer structure, a ∼2x reduction of the threading dislocation density was observed and the short-circuit current density increased by 22% relative. A majority barrier was identified and could be suppressed to obtain a new record conversion efficiency of 25.9% with an open-circuit voltage of 2.647 V, a short-circuit current density of 12.2 mA/cm 2 and a fill factor of 80.2%.
Author(s)
Feifel, Markus
Lackner, David  
Ohlmann, Jens  
Volz, Kerstin
Hannappel, Thomas
Hermle, Martin  
Benick, Jan  
Dimroth, Frank  
Mainwork
47th IEEE Photovoltaic Specialists Conference, PVSC 2020  
Conference
Photovoltaic Specialists Conference (PVSC) 2020  
Open Access
File(s)
Download (1.6 MB)
Download (462.65 KB)
Rights
Use according to copyright law
DOI
10.24406/publica-r-410156
10.1109/PVSC45281.2020.9300594
Language
English
Fraunhofer-Institut für Solare Energiesysteme ISE  
Keyword(s)
  • Photovoltaik

  • Silicium-Photovoltaik

  • III-V- und Konzentrator-Photovoltaik

  • Dotierung und Diffusion

  • III-V Epitaxie und Solarzellen

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