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Beyond SIC Power Devices and Technology - Novel High Temperature SIC CMOS 1 Micron Technology
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2020
Presentation
Titel
Beyond SIC Power Devices and Technology - Novel High Temperature SIC CMOS 1 Micron Technology
Titel Supplements
Presentation held at 4th International Symposium on SiC Materials and Devices 2020, 26.11.2020, Busan, Republic of Korea
Author(s)
Erlbacher, T.
Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB
Konferenz
International Symposium on SiC Materials and Devices 2020
File(s)
N-624555.pdf (1.62 MB)
Language
English
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Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB
